Accession Number:

ADA179671

Title:

Field Dependence of Geminate Recombination in a Dielectric Medium.

Descriptive Note:

Final rept. Oct 74-Sep 75,

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1987-01-01

Pagination or Media Count:

20.0

Abstract:

The problem of recombination in insulators, especially thermally grown SiO2, is an important part of the radiation response of microelectronic circuits. This report treats the geminate recombination process between an isolated electronion pair in the presence of an applied field. Specifically, the Onsager solution of the Smoluchowski equation has been programmed for numerical computation. The program has been applied to thermally grown SiO2, and the results are presented as a function of applied field for several temperatures. A mean initial separation between negative and positive charges must be assumed, and the sensitivity of the result to this assumption is examined. The model results predict very little temperature dependence except at very low fields. These results will be compared with measurements in the future. Keywords Metal oxide semiconductors Recombination Silicon dioxide.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE