Accession Number:

ADA179617

Title:

Study of Quantum Mechanical Effects in Deep Submicron, Grating-Gate Field Effect Transistors.

Descriptive Note:

Annual technical rept. 30 Sep 85-29 Sep 86,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Report Date:

1986-12-30

Pagination or Media Count:

8.0

Abstract:

This research program investigates the effect of extreme submicron spatial modulation of the electrostatic potential on the transport of electrons in silicon and in III-V compound semiconductor devices. The test vehicle is the so called grating gate FET GGFET. When made to move in a direction perpendicular to the potential modulation, i.e., perpendicular to the grating gate, electrons experience a surface superlattice SSL effect. When moving along the potential modulation electrons are restricted to only one degree of freedom and thus constitute a one dimensional system. The major accomplishments to date are in process technology and design of the devices. They are 1 Double X raydeep UV exposure of PMMA to simultaneously define fine and coarse patterns 2 High temperature 950 C anneal of Silicon wafer after delineation of tungsten conductor patterns, to eliminate x ray damage of silicon dioxide and 3 Design of GalliumGallium Aluminum Arsenide structure for the implementation of the III-V GGFET. Keywords MOSFET Semiconductors Field effect transistors X ray lithography.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE