Accession Number:

ADA179499

Title:

Continuation of Research in the Development of High Sensitivity X-Ray and Electron Beam Resists Processes.

Descriptive Note:

Final technical rept. 1 Jan 85-30 Jun 86,

Corporate Author:

CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s):

Report Date:

1987-02-25

Pagination or Media Count:

99.0

Abstract:

Electron beam lithography is used for mask making, and offers promise for fabrication of high density integrated circuits since it does not have the inherent limitations of optical lithography. Investigations were conducted to obtain a better understanding of e beam resist dissolution with a direct application to the image transfer step in e beam lithography. Studies were performed with polymethyl methacrylate, PMMA, which is a commonly used electron beam resist. The studies included the monitoring of resist swelling and dissolution kinetics using in-situ ellipsometry, and modeling efforts to describe the basic physics of resist dissolution.

Subject Categories:

  • Plastics
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE