Accession Number:

ADA179230

Title:

Fabrication of AlGaAs/InGaAs Pseudomorphic Modulation Doped Field Effect Transistors with p-Doped Surface Layers.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1986-12-01

Pagination or Media Count:

145.0

Abstract:

In this thesis modulation doped field-effect transistors MODFETs were fabricated. Two recently developed improvements to the MODFET structure were incorporated to produce an electronic device that had never before been fabricated. Highly p-doped surface layers were incorporated under the gate contact of the device. These layers have been shown to increase the Schottky barrier height at the MODFETs. Pseudomorphic AlGaAsInGaAs technology was also incorporated for its proven unsurpassed electron saturation velocity and resulting high speed of operation. To evaluate the response of these ES pseudomorphic devices, their characteristics were measured and compared directly with those of reference samples fabricated at the reference transistors were etched off chemically just before deposition of gate contact metal. The peak transconductance, threshold voltage, contact resistance and barrier height of all devices were measured at direct current DC. Also, microwave S-parameters were measured over the range of 2 to 12 gigahertz GHz.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE