Accession Number:

ADA179110

Title:

Investigation of Electromigration in Thin Film Aluminum at Low Temperatures.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1986-12-19

Pagination or Media Count:

109.0

Abstract:

This thesis project collects electromigration induced time to failure data from unglassed and glassed one percent silicon doped aluminum test patterns at four current densities 4.5, 4.75, 5.5, and 6.25 mega-amps per square centimeter. At 4.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative thirteen and seventy degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electron-volts. At 4.75 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and eighty degrees centigrade. From the data, the activation energy is calculated to be between approximately 0.3 electron-volts between ten and eighty degrees centigrade. At 5.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and twenty degrees centigrade. From the data, the activation energy is calculated to be between 0.35 and 0.43 volts for temperatures between negative seven and twenty degrees centigrade. At 6.25 mega-amps per square centimeter, glassed pattern time to failure data is collected between negative thirteen and eighty degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electronvolts at temperatures between twenty and eighty degress centigrade. These ranges of activation energies indicate that surface electromigration is the dominant failure mechanism. Keywords Electromigration Low temperature Silicon doped aluminum Thin films Aluminum.

Subject Categories:

  • Electrical and Electronic Equipment
  • Metallurgy and Metallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE