Picosecond Optical Electronics.
Final rept. 1 Jul 84-30 Jun 85,
STANFORD UNIV CALIF W W HANSEN LABS OF PHYSICS
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An electrooptic EO sampling system suitable for high speed measurements on gallium arsenide GaAs integrated circuits ICs was developed. This measurement technique is based on the linear electrooptic effect in GaAs. Using a longitudinal probing geometry, sub bandgap energy infrared light is passed through the substrate of a GaAs IC, reflected off some circuit metallization, and passed through a polarizer, resulting in an intensity change of the light past the polarizer proportional to the voltage across the substrate.
- Electrooptical and Optoelectronic Devices
- Infrared Detection and Detectors