Single Event Upset Rate Estimates for a 16-K CMOS (Complementary Metal Oxide Semiconductor) SRAM (Static Random Access Memory).
AEROSPACE CORP EL SEGUNDO CA SPACE SCIENCES LAB
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A radiation-hardened 16K CMOS SRAM has been developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single event cross section and effective funnel length were made using the Lawrence Berkeley Laboratorys 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adams 90 worst case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.
- Computer Hardware
- Particle Accelerators
- Solid State Physics