Accession Number:

ADA176857

Title:

Single Event Upset Rate Estimates for a 16-K CMOS (Complementary Metal Oxide Semiconductor) SRAM (Static Random Access Memory).

Descriptive Note:

Technical rept.,

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA SPACE SCIENCES LAB

Report Date:

1986-09-30

Pagination or Media Count:

30.0

Abstract:

A radiation-hardened 16K CMOS SRAM has been developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single event cross section and effective funnel length were made using the Lawrence Berkeley Laboratorys 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adams 90 worst case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.

Subject Categories:

  • Computer Hardware
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE