Accession Number:

ADA175912

Title:

Blue-Green Laser Diode Research Program.

Descriptive Note:

Quarterly progress rept. no. 2, 1 Jul-30 Sep 86.

Corporate Author:

MINNESOTA MINING AND MFG CO ST PAUL ELECTRONIC AND INFORMATION SECTOR LAB

Personal Author(s):

Report Date:

1986-10-01

Pagination or Media Count:

63.0

Abstract:

Throughout the fourth quarter of the first program year, work in the St. Paul Laboratory has concentrated on completing the growth matrix study relating the properties of ZnSe grown on 100 GaAs to growth temperature and beam-pressure ratio BPR. In the same period, the Toronto effort has concentrated on a comparison of the properties of ZnSe films grown on 100 GaAs with those grown on 100 Ge during the same growth run. In the course of the above efforts, there have been several achievements which are particularily noteworthy in that they indicate that our epitaxial films are of exceptionally high quality. First we have achieved the highest peak mobility above 7,000 sq cmV. sec. ever observed for MBE-grown ZnSe. Second, we have reduced the donor concentration and, thereby, increased the compensation ratio to the point that unintentionally-incorporated acceptor bound exciton emission is clearly discernible in the photoluminescence spectra. Lastly, we have demonstrated, for the first time, electron-beam pumped laser action in epitaxial ZnSe films, and have observed low threshold current densities at temperatures as high as room temperature.

Subject Categories:

  • Lasers and Masers
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE