Si-F Bond Directions on Si(100). A Study by ESDIAD.
PITTSBURGH UNIV PA SURFACE SCIENCE CENTER
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The first observation of ion angular distribution originating from electron stimulated desorption of an adsorbed atomic species on a semiconductor surface ESDIAD is described. F is emitted from Si100-2 x 1 along 4 azimuths corresponding to the principal crystal axes. The most probable F energy is 2.4 eV. The F angle, alpha 36 or - 5 degrees to the surface normal, corresponds closely to the Si-F surface bond direction. This F angular distribution is consistent with F bonding to Si dimers which are in two orthogonal reconstructions on Si100-2 x 1. The threshold electron energy, V sub T superscript c 27.5 or - 1 eV for F production from the Si-F surface species.
- Atomic and Molecular Physics and Spectroscopy