Accession Number:

ADA175796

Title:

Materials Research Society Symposia Proceedings. Volume 59. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon Held in Boston, Massachusetts on 2-5 December 1985,

Descriptive Note:

Final rept. 25 Jan 85-24 Nov 86,

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Report Date:

1986-01-01

Pagination or Media Count:

599.0

Abstract:

These Proceedings highlight the important research subjects involving the light element impurities, Oxygen, Carbon, Hydrogen, and Nitrogen in crystalline silicon. It is fitting that specialists from many countries presented both timely reviews and new research results on these unique semiconductor defects to the participants, who represented a variety of multi-disciplinary fields of materials science. Although the proceedings are organized by impurity element, they all have been characterized by common chemical, structural, and electrical techniques.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE