Materials Research Society Symposia Proceedings. Volume 59. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon Held in Boston, Massachusetts on 2-5 December 1985,
Final rept. 25 Jan 85-24 Nov 86,
MATERIALS RESEARCH SOCIETY PITTSBURGH PA
Pagination or Media Count:
These Proceedings highlight the important research subjects involving the light element impurities, Oxygen, Carbon, Hydrogen, and Nitrogen in crystalline silicon. It is fitting that specialists from many countries presented both timely reviews and new research results on these unique semiconductor defects to the participants, who represented a variety of multi-disciplinary fields of materials science. Although the proceedings are organized by impurity element, they all have been characterized by common chemical, structural, and electrical techniques.
- Solid State Physics