Accession Number:

ADA175786

Title:

Growth of HgZnTe Layers by LPE Technique.

Descriptive Note:

Rept. no. 2, 1 Mar 86-1 Jul 86,

Corporate Author:

ISRAEL ATOMIC ENERGY COMMISSION YAVNE SOREQ NUCLEAR RESEARCH CENTRE

Personal Author(s):

Report Date:

1986-07-01

Pagination or Media Count:

6.0

Abstract:

The objective of this project is to develop liquid phase epitaxial layers of Hgl-xZnxTe and to study their possible applicability as a material for IR detectors. The program for the first year includes two tasks 1. Optimization of the growth process of the HgZnTe epilayers. 2. Growth of high Zn content Cdl-yZnyTe crystals for substrates which are lattice matched with the epilayers. In the present interim report experimental details and results concerning the two tasks are described.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE