Growth of HgZnTe Layers by LPE Technique.
Rept. no. 2, 1 Mar 86-1 Jul 86,
ISRAEL ATOMIC ENERGY COMMISSION YAVNE SOREQ NUCLEAR RESEARCH CENTRE
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The objective of this project is to develop liquid phase epitaxial layers of Hgl-xZnxTe and to study their possible applicability as a material for IR detectors. The program for the first year includes two tasks 1. Optimization of the growth process of the HgZnTe epilayers. 2. Growth of high Zn content Cdl-yZnyTe crystals for substrates which are lattice matched with the epilayers. In the present interim report experimental details and results concerning the two tasks are described.
- Solid State Physics