Anisotropic and Selective Reactive Ion Etching of SiC in CHF(3) and Oxygen Plasma.
Interim technical rept.,
RENSSELAER POLYTECHNIC INST TROY NY CENTER FOR INTEGRATED ELECTRONICS
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The use of CHF3 plus oxygen to achieve selective and anisotropic patterning of SiC thin films in the reactive ion etching RIE mode is reported. Experiments were performed using various levels of oxygen percentage from zero to 90, pressure from 20 to 300 mTorr and power from 100W to 350W. Anisotropic etching of SiC with a vertical-to-lateral etch ratio in excess of 81 was measured for a CHF3 7502 mixture at 20mT pressure and 200W RF power. Under these conditions, the SiC etch rate was measured to be 400 Amin and the selectivity over Si was approximately 2.21. The effect of the cathode DC potential and emission intensity of various species in the plasma on the SiC and Si etch rates is considered.
- Manufacturing and Industrial Engineering and Control of Production Systems
- Plasma Physics and Magnetohydrodynamics