Accession Number:

ADA172942

Title:

Investigation of Ion Implantation into High Purity and Controllably Doped Silicon and into Gallium Arsenide.

Descriptive Note:

Final rept. Jan 82-Feb 83,

Corporate Author:

SALFORD UNIV (ENGLAND DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Carter,G.

Report Date:

1983-02-21

Pagination or Media Count:

61.0

Abstract:

Analytical analysis of the data derived from the use of Rutherford backscattering-channelling measurements of disorder production in ion implanted semiconductors for the determination of damage production mechanisms. The redistribution and lattice incorporation of implanted impurities in Si during controlled furnace annealing to reorder the implantation damaged Si. The production of disorder in InP by light and heavy ion implantation as a function of implant flux and fluence and implant temperature. Investigation, in parallel with 3 of the damage creation and annealing processes associated with the interaction of the RBSchannelling analysis ion probe with heavy ion implantation damage in InP.

Descriptors:

• *ION IMPLANTATION
• *SILICON
• *INDIUM PHOSPHIDES
• TEMPERATURE
• ANNEALING
• DAMAGE ASSESSMENT
• IMPURITIES
• CHANNELS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE