Accession Number:

ADA172890

Title:

Apparatus for Analysis of Epitaxial Crystal Growth.

Descriptive Note:

Final rept. 1 Aug 83-1 Oct 84,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES

Personal Author(s):

• Dapkus,P. D.

Report Date:

1986-07-08

Pagination or Media Count:

7.0

Abstract:

In this grant funds were requested and received for the purchase of an epitaxial growth and analysis apparatus to investigate the chemistry, photochemistry, and kinetics of growth of semiconductor thin films by metalorganic chemical vapor deposition MOCVD. The apparatus consists of an epitaxial growth chamber compatible with the inclusion of in situ diagnostic techniques, an excimer dye laser system for use in laser induced fluorescence LIF studies of gaseous speices, and a mass spectrometer for in situ analysis of gaseous constituents of MOCVD growth environment. These items were to be incorporated into a system for the investigation of the growth kinetics of MOCVD.

Descriptors:

• *CHEMICAL ANALYSIS
• *LABORATORY EQUIPMENT
• LASER INDUCED FLUORESCENCE
• THIN FILMS
• ORGANOMETALLIC COMPOUNDS
• EPITAXIAL GROWTH
• VAPOR DEPOSITION
• MASS SPECTROMETERS

Subject Categories:

• Physical Chemistry
• Test Facilities, Equipment and Methods
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE