Microwave Acoustics Device Study.
Final rept. 1 Sep 84-31 Aug 85,
IOWA STATE UNIV AMES
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This final report summarizes the results of a single one year study of the device physics aspects of the thin film bulk acoustic wave resonator. The study involved high Q trapped energy resonators, zinc diffusions in GaAs as a precursor to temperature coefficient studies, and refinements to the two dimensional numerical analysis modeling of microwave acoustic boundary value problems by the finite difference method. Keywords Microwave acoustics, Thin film resonators, Bulk acoustic waves, Diffusion of Zn, and GaAs.
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