Accession Number:

ADA172713

Title:

Microwave Acoustics Device Study.

Descriptive Note:

Final rept. 1 Sep 84-31 Aug 85,

Corporate Author:

IOWA STATE UNIV AMES

Personal Author(s):

• Lakin,K. M.

Report Date:

1986-07-22

Pagination or Media Count:

49.0

Abstract:

This final report summarizes the results of a single one year study of the device physics aspects of the thin film bulk acoustic wave resonator. The study involved high Q trapped energy resonators, zinc diffusions in GaAs as a precursor to temperature coefficient studies, and refinements to the two dimensional numerical analysis modeling of microwave acoustic boundary value problems by the finite difference method. Keywords Microwave acoustics, Thin film resonators, Bulk acoustic waves, Diffusion of Zn, and GaAs.

Descriptors:

• *GALLIUM ARSENIDES
• *THIN FILMS
• *RESONATORS
• FINITE DIFFERENCE THEORY
• ZINC
• DIFFUSION

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE