Electronic Structure of Langmuir-Blodgett Films on GaAs and Other Materials.
Interim rept. no. 3, 15 Jul 85-14 Feb 86,
STRATHCLYDE UNIV GLASGOW (UNITED KINGDOM) DEPT OF PHYSICS
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The intent of this preliminary programme was to deposit langmuir-Blodgett LB films on semiconductor surfaces, and assess their structure, thickness and perfection using a variety of experimental techniques. In doing this we have contributed to rehousing Professor Pethricks L-B trough in a clean room in the Chemistry Laboratory. This followed advice from Dr. M. Petty at Durham University, largely because we have experienced difficulties in obtaining reproducible results with many samples. To date our work has been concerned with GaAs, GaP and Si, all in the form of 111 wafers, which had been mechanically polished to an 0.25 micrometer finish using diamond paste, prior to chemical polishing and refluxing for several hours in isopropyl alcohol vapour. Such samples were assumed to be clean, and were kept in an evacuated chamber until ready to be treated in the L B trough.
- Solid State Physics