Semiconductor Engineering for High-Speed Devices
Quarterly rept. no. 2, 1 Oct-31 Dec 1985
SRI INTERNATIONAL MENLO PARK CA
Pagination or Media Count:
Our aim in this period has been to devise a simple, physically intuitive model to study the quantitative trends of hot-electron behavior in semiconductor alloys. This is being done to offer preliminary guidance to experimental programs, and to serve as a simple limit to check the more elaborate calculations still to come. Even our simple model is based on fairly complete alloy band structures, and therefore constitutes an advance over previously published results.
- Solid State Physics