Accession Number:

ADA172092

Title:

Semiconductor Engineering for High-Speed Devices

Descriptive Note:

Quarterly status rept. no. 1, 1 Jun-15 Sep 1985

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Personal Author(s):

Report Date:

1985-09-18

Pagination or Media Count:

5.0

Abstract:

This rpt contains a summary of significant accomplishments and progress during the reporting period. Programs to calculate pure crystal and alloy band structures have been completed and now include all important components, e.g. long-range interactions, spin-orbit interactions, and molecular CPA. The parameters that properly reproduce the band structures of light III-V compounds--GaP, InP, AlAs, GaAs, InAs, AlSb, GaSb, and InSb--have been selected and their band structures calculated. We are now prepared to run the band structures of the 14 three--component pseudo-binary alloys of these materials. These calculations were undertaken to test our procedures on a comparatively simple, well-characterized alloys system. The results agree with experiment and give satisfactory explanation of several features that were previously thought to be anomalous. It is clear that the general trends of the data and theory agree.

Subject Categories:

  • Numerical Mathematics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE