Single Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy,
Annual technical rept. 1 Mar 85-28 feb 86,
MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
Pagination or Media Count:
The objective of this program is to carry out basic research in order to acquire fundamental understanding which will permit the development of a general, low temperature process for obtaining oriented, defect free single crystal semiconductor films on amorphous substrates.
- Solid State Physics