Accession Number:

ADA172053

Title:

Semiconductor Engineering for High-Speed Devices

Descriptive Note:

Quarterly Rept. no. 3, 1 Jan-31 Mar 1986

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Personal Author(s):

Report Date:

1986-03-16

Pagination or Media Count:

6.0

Abstract:

This report summarizes accomplishments during the 3rd Quarterly reporting period. Our aim has been to improve the accuracy of the model described in the previous report an to predict v-E behavior in various alloys. The two valley-single electron temperature model was further generalized to calculate v-E characteristics without assuming a constant energy relaxation time. As the electric field is increased, the average energy of electrons increases. Electrons lose some energy to the lattice. The rate of energy loss is calculated by assuming that energy transfer takes place only through longitudinal optical phonons. Based on our preliminary calculations, we conclude that alloys with constituent materials that exhibit an indirect gap are not suited for high speed devices. However, there are some interesting features to their behavior, e.g. a large negative temperature coefficient of the mobility which could prove to be useful in temperature sensors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Metallurgy and Metallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE