Accession Number:

ADA171908

Title:

Fabrication and Modeling of Ambipolar Hydrogenated Amorphous Silicon Thin Film Transistors.

Descriptive Note:

Doctoral thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1986-08-01

Pagination or Media Count:

179.0

Abstract:

The hydrogenated amorphous silicon a-SiH thin film transistor TFT has been studied extensively for several years. Its application as a switching element in large area liquid crystal display arrays has been demonstrated. Modeling studies have been performed to quantify and explain the performance of the a-SiH TFT. However, throughout these investigations little has been reported concerning the ambipolar nature of the a-SiH TFT that is, the ability of the device to operate alternatively as an n-channel or a p-channel device. The work described in this thesis extends the previous by specifically addressing the ambipolar behavior of the a-SiH TFT. In particular, a process sequence has been developed to fabricate high quality ambipolar a-SiH TFTs with emphasis on ohmic sourcedrain contacts. Using experimental data from these devices and TFT theory, a model has been developed for obtaining the output drain current vs. drain voltage of ambipolar a-SiH TFTs. The model involves the numerical integration of an interpolated sheet conductance function. By using the appropriate flat-band voltage, the model accurately predicts the experimental output drain current characteristics for both n- and p-type operation over many orders of magnitude.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE