Atomic Layer Epitaxy of III-V Compounds.
Annual rept. Sep 85-Aug 86,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
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This program is intended to develop a process for the growth of GaAs and related compounds by Atomic Layer Epitaxy ALE. The program involves fundamental studies of gas phase kinetics of the organometallic and hydrides to be used in the process as well as surface reaction studies to determine the surface of various organometallics. We have chosen in this program to effect ALE growth in a dense H2 atmosphere. We believe that the reactivity of H2 is important to the removal, by hydrogenation, of the alkyl radicals from the growing surface. To better understand the process we are pursuing fundamental information in two areas. First, basic measurements of the reactivity band reaction products of organometallics and hydrides and of photogenerated species with compound semiconductor surfaces are being undertaken that will determine the feasibility of using photoactivation and in thermal catalytic reactions in the gas phase to accomplish ALE. Second, epitaxial growth experiments are being performed to determine the feasibility of an ALE process employing photodecomposition of surface absorbed species as well as thermal catalytic reactions.
- Physical Chemistry
- Radiation and Nuclear Chemistry