New Ultra-Low Permittivity Composites for Use in Ceramic Packaging of Ga:As Integrated Circuits
Annual rept. 1 Aug 1985-31 Jul 1986
PENNSYLVANIA STATE UNIV STATE COLLEGE MATERIALS RESEARCH LAB
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This report documents work performed over the second year of a three- year joint program between the Materials Research Laboratory at Penn State University and Interamics in La Jolla, CA, to develop new ultra-low permittivity composite dielectrics for use in the ceramic packaging of GaAs integrated circuits. The period covered by this report is August 1, 1985, to July 31, 1986, and the work was supported by ONR Contract No. N00014-84-K-00721 under DARPA order No. 5157. Topics for study during this year at Penn State have been 1. Sol-gel processing of si02 films and monoliths. 2. Sputter deposited Si02 film structures. 3. Microporous glass structures. 4. Macro-Defect-Free MDF cements.
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