Accession Number:

ADA171705

Title:

New Ultra-Low Permittivity Composites for Use in Ceramic Packaging of Ga:As Integrated Circuits

Descriptive Note:

Annual rept. 1 Aug 1985-31 Jul 1986

Corporate Author:

PENNSYLVANIA STATE UNIV STATE COLLEGE MATERIALS RESEARCH LAB

Personal Author(s):

• Cross, L. E.

Report Date:

1986-08-11

Pagination or Media Count:

98.0

Abstract:

This report documents work performed over the second year of a three- year joint program between the Materials Research Laboratory at Penn State University and Interamics in La Jolla, CA, to develop new ultra-low permittivity composite dielectrics for use in the ceramic packaging of GaAs integrated circuits. The period covered by this report is August 1, 1985, to July 31, 1986, and the work was supported by ONR Contract No. N00014-84-K-00721 under DARPA order No. 5157. Topics for study during this year at Penn State have been 1. Sol-gel processing of si02 films and monoliths. 2. Sputter deposited Si02 film structures. 3. Microporous glass structures. 4. Macro-Defect-Free MDF cements.

Descriptors:

• *DIELECTRIC FILMS
• *DIELECTRICS
• *GALLIUM ARSENIDES
• *INTEGRATED CIRCUITS
• *SILICON DIOXIDE
• CEMENTS
• COMPOSITE STRUCTURES
• DEPOSITION
• GLASS
• MONOLITHIC STRUCTURES(ELECTRONICS)
• SPUTTERING

Subject Categories:

• Electrical and Electronic Equipment
• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE