Research in VLSI Reliability.
Annual rept. 1 Aug 85-31 Jul 86,
CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING
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In order to increase the circuit density and speed of VLSI systems, microelectronic device geometry is shrinking from a few microns to submicron and beyond. This scaling has greatly heightened the need for a better understanding of the failure mechanisms affecting the long-term reliability of VLSI system and for improved methods of designing and testing for reliability. In contrast to production technologies and circuit performances, whose failures to meet specifications will be either obvious or relatively easily discovered before the circuits are incorporated into complex systems or missions, reliability failures cannot be easily or completely eliminated. When they do occur, reliability failures can be costly in many ways. The objective of this research is to gain basic scientific understanding of the mechanisms of the three leading hard failure modes oxide wearout, hot-electron-induced degradations, and contact and metal failures. the basic understanding should lead to failure models and methods to improve reliability assurance through design, processing, and testing techniques. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems