Accession Number:

ADA171533

Title:

Optical Emission Properties of Metal/III-V Semiconductor Interface States,

Descriptive Note:

Corporate Author:

XEROX WEBSTER RESEARCH CENTER NY

Personal Author(s):

• Viturro, R. E.
• Slade, M. L.
• Brillson, L. J.

Report Date:

1986-06-25

Pagination or Media Count:

16.0

Abstract:

We report the first study of optical emission properties associated with formation of metalIII-V semiconductor interface states. Cathodoluminescence spectroscopy reveals discrete levels distributed over a wide energy range and localized at the microscopic interface. Our results demonstrate the influence of the metal, the semiconductor and its surface morphology on the energy distributions. Evolution of spectral features with interface formation, particularly above monolayer metal coverage, is correlated with Fermi level movements and Schottky barrier heights. Author

Descriptors:

• *METALS
• *INTERFACES
• *SEMICONDUCTORS
• *GROUP III COMPOUNDS
• *GROUP V COMPOUNDS
• *CATHODOLUMINESCENCE
• GALLIUM ARSENIDES
• FERMI SURFACES
• INDIUM PHOSPHIDES
• SCHOTTKY BARRIER DEVICES

Subject Categories:

• Physical Chemistry
• Optics
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE