Kinetics and Mechanisms on the Molecular Beam Etching of Semiconductors.
Final rept. 15 Aug 82-15 Feb 86,
HUGHES RESEARCH LABS MALIBU CA
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The main issue addressed was the role of the ion beam in control of anisotropy and selectivity in the ion-beam assisted etching IBAE of layered samples of Si and SiO2, as are used in CMOS gate applications. The results on patterned samples were correlated directly with the geometrical relationship of the incident beams and the sample. Rate data were obtained which suggest that the reaction proceeds by facilitated attack of reactant species at defect sites created by the ion beam. It was demonstrated that ion beam energy greater than 500 eV caused inadequate selectivity between Si and SiO2. It was shown that inadequate selectivity is the main problem holding back implementation of IBAE as a practical process. It is suggested that additional work in the direction of low energy IBAE 50-500 eV be pursued.
- Manufacturing and Industrial Engineering and Control of Production Systems
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