Accession Number:

ADA171225

Title:

Fundamental Aspects of Heterojunction Bipolar Transistor Technology.

Descriptive Note:

Final rept. 15 Jun 83-30 Jun 86,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1986-07-01

Pagination or Media Count:

8.0

Abstract:

Fundamental aspects of heterojunction bipolar transistor HBT technology were investigated, including Be diffusion in MBE growth, the effects of epitaxial structure variations on HBT technology, effects of selected device processing methods on HBT performance,and modelling of HBT devices and ring oscillators. A summary of major results in each of these areas is given, and publications resulting from this contract are listed. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE