Fundamental Aspects of Heterojunction Bipolar Transistor Technology.
Final rept. 15 Jun 83-30 Jun 86,
ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
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Fundamental aspects of heterojunction bipolar transistor HBT technology were investigated, including Be diffusion in MBE growth, the effects of epitaxial structure variations on HBT technology, effects of selected device processing methods on HBT performance,and modelling of HBT devices and ring oscillators. A summary of major results in each of these areas is given, and publications resulting from this contract are listed. Author
- Electrical and Electronic Equipment
- Solid State Physics