Accession Number:

ADA171100

Title:

Rapid Thermal Nitridation of SiO2 for Nitroxide Thin Dielectrics,

Descriptive Note:

Corporate Author:

STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS

Personal Author(s):

• Moslehi, Mehrdad M.
• Saraswat, Krishna C.
• Shatas, Steven C.

Report Date:

1985-11-15

Pagination or Media Count:

3.0

Abstract:

Nitroxide thin films have been grown by rapid thermal nitridation of oxidized silicon in ammonia. The kinetics of formation of the surface and interface nitrogen-rich layers has been investigated and correlated to the electrical behavior of these films. It could be concluded that rapid thermal nitridation of 100 A SiO2 results in negative shift of flatband voltage, slightly increases the surface state density, increases the low-field conductivity, reduces the high-field conductivity, improves the dielectric breakdown field, modifies the trapping behavior of the insulator, and slows down the generation rate of new surface states due to high-field electrical stress.

Descriptors:

• *ANNEALING
• *DIELECTRIC FILMS
• *NITRIDING
• *SILICON DIOXIDE
• GROWTH(GENERAL)
• KINETICS
• LAYERS
• NITROGEN OXIDES
• QUICK REACTION
• REPRINTS
• SURFACES
• THIN FILMS

Subject Categories:

• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE