Accession Number:

ADA171067

Title:

Development of NbN Josephson Junction Technology.

Descriptive Note:

Final rept. 14 Sep 85-15 Jun 86,

Corporate Author:

HYPRES INC ELMSFORD NY

Personal Author(s):

Report Date:

1986-07-24

Pagination or Media Count:

21.0

Abstract:

A novel process suitable for fabrication superconducting circuitry based on the all refactory material NbN is described. In this process, and in-situ trilayer film composed of NbNMgONbN is used to fabricate Josephson tunnel junctions. Reactive ion etching processes are used to delineate devices and pattern insulators and metallizations. Fabricated junctions have yielded good tunneling characteristics with reasonable current density uniformity and reproducibility. Devices with gap voltages close to 3mV have been achieved for high quality junctions Vm 20 mV. In addition to the trilayer, there are two wiring layers, two resistor depositions, and two insulation layers, constituting a full NbN based fabrication technology. Using this process, we fabricated and successfully tested thin film DC SQUID and time domain reflectometer TDR circuits. Preliminary measurements suggest that the critical temperature of these circuits is well within the operating temperature of commercial two-stage closed cycle refrigerators. Author

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE