High Efficiency Multiple Bandgap Solar Cell Research.
Final rept. Aug 84-Sep 85,
CHEVRON RESEARCH CO RICHMOND CALIF
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The development of GaAsPGaP devices was made for stacking on silicon bottom cells to achieve high conversion efficiencies. The estimated efficiency of the completed devices was 21 AMO under concentrated light. A four terminal sack was incorporated to allow voltage matching wiring schemes to account for differing degradation of the individual devices in the space environment. Device optimization was defined for a bandgap difference of 0.6 to 0.8 eV, with projected efficiencies of 27 for GaAsPGaP stacked onto GaAsSb or GaInAs, and GaAs on Ge or GaSb.
- Non-electrical Energy Conversion
- Electric Power Production and Distribution