Accession Number:

ADA170965

Title:

High Efficiency Multiple Bandgap Solar Cell Research.

Descriptive Note:

Final rept. Aug 84-Sep 85,

Corporate Author:

CHEVRON RESEARCH CO RICHMOND CALIF

Report Date:

1986-06-01

Pagination or Media Count:

50.0

Abstract:

The development of GaAsPGaP devices was made for stacking on silicon bottom cells to achieve high conversion efficiencies. The estimated efficiency of the completed devices was 21 AMO under concentrated light. A four terminal sack was incorporated to allow voltage matching wiring schemes to account for differing degradation of the individual devices in the space environment. Device optimization was defined for a bandgap difference of 0.6 to 0.8 eV, with projected efficiencies of 27 for GaAsPGaP stacked onto GaAsSb or GaInAs, and GaAs on Ge or GaSb.

Subject Categories:

  • Non-electrical Energy Conversion
  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE