Investigation of a New Concept in Semiconductor Microwave Oscillators.
Annual rept. 1 May 85-30 Apr 86,
PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING
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The goal of this research is to fabricate and characterize a new type of semiconductor device known as a contiguous-domain transferred oscillator. This device differs from existing semiconductor oscillators in several fundamental ways, and should be capable of direct electronic tuning in the range from a few gigahertz to a few hundred gigahertz. During the first year of this project, test chips were designed, masks were made, and a processing schedule was worked out. Three aspects of the processing required special attention implant activation, resistive gate formation, and silicon nitride deposition. Uncapped flash annealing was used for implant activation, and satisfactory results were achieved.
- Electrical and Electronic Equipment
- Solid State Physics