Accession Number:

ADA170618

Title:

Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor).

Descriptive Note:

Technical rept.,

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB

Personal Author(s):

Report Date:

1986-06-15

Pagination or Media Count:

28.0

Abstract:

In this report, we present picosecond optoelectronic measurements of the pulse response of an unpackaged GaAs field effect transistor FET. The data are transformed to the frequency domain to extract scattering parameters with 60 GHz bandwidth. Because of the large bandwidth available and simple de-embedding procedures, this is a very promising technique for characterization of devices operating in the millimeter-wave region.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE