Accession Number:

ADA170503

Title:

Picosecond Optoelectronic Diagnostics of Field Effect Transistors,

Descriptive Note:

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA

Personal Author(s):

Report Date:

1986-06-15

Pagination or Media Count:

15.0

Abstract:

The frequency-dependent scattering parameters of an unpackaged GaAs field effect transistor have been measured using picosecond optoelectronic diagnostic techniques. The large bandwidth available and simple de-embedding procedures make these techniques very promising for characterization of devices operating in the millimeter-wave region. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE