Large Signal Modeling and Analysis of the GaAs MESFET.
Technical rept. for period ending 1 Jun 86,
TEXAS UNIV AT AUSTIN ELECTRICAL ENGINEERING RESEARCH LAB
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The purpose of this work is to develop a large signal lumped circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly or indirectly from the DC and RF measurements of the device to be modeled. To analyze this circuit model, a nonlinear circuit simulation computer program is written. This routine is base on a hybrid time-frequency domain iterative algorithm called multiple reflection technique. To improve the speed of analysis, an accelerate convergence scheme is incorporated into the multiple reflection technique for the first time to analyze three terminal device. The validity of the analysis algorithm is first checked by comparing the simulation results of a MESFET with published data. The large signal model developed is then confirmed by comparing the simulation results of a MESFET modeled in this work to the experimental results. Author
- Electrical and Electronic Equipment
- Theoretical Mathematics
- Solid State Physics