Novel Si-Based Materials and Device Structures by Molecular Beam Epitaxy.
Final rept. 25 Apr 83-24 Apr 86,
CALIFORNIA UNIV LOS ANGELES
Pagination or Media Count:
The final report describes the technical tasks and accomplishments during the contractual period from April 25, 1983 to April 24, 1986. Research findings in four scientific areas, a MBE growth, b heterojunction properties, c superlattice and quantum well structural devices, and Si on insulator by MBE are summarized. Details of these results are referred to the journal publications attached. In addition to scientific publications, the results of this research also help industrial development of commercial molecular beam epitaxy systems in U.S.
- Solid State Physics