Accession Number:

ADA169772

Title:

Modified LDD Device Structures VLSI,

Descriptive Note:

Corporate Author:

STANFORD UNIV CA INTEGRATED CIRCUITS LAB

Personal Author(s):

Report Date:

1985-01-01

Pagination or Media Count:

4.0

Abstract:

In LDD-like MOSFET structures previously studied, narrow, self- aligned n- regions are introduced between the channel and the n source-drain regions. In this paper, we describe a new n-MOS device structure which attempts to overcome some of the reliability problems of LDD devices. Instead of a pure n- region, we introduce a short-channel JFET under the sidewall oxide at the drain end in series with the intrinsic MOSFET. Both 2-D device simulations and experimental results are shown to demonstrate the operation of this device and its potential for VLSI applications.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE