Accession Number:

ADA169699

Title:

Low Temperature Silicon Oxidation Studies.

Descriptive Note:

Technical rept.,

Corporate Author:

NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1986-06-20

Pagination or Media Count:

11.0

Abstract:

Several models have been proposed to explain the role of stress on low temperature silicon oxidation kinetics but the lack of experimental data has precluded an analysis of these models. The results of experimental studies independently measuring the reaction kinetics and intrinsic stress as a function of orientation and oxidation temperature are presented. The proposed stress models are evaluated in terms of these results. It is concluded that the existing models do not explain all aspects of the data.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE