Low Temperature Silicon Oxidation Studies.
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
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Several models have been proposed to explain the role of stress on low temperature silicon oxidation kinetics but the lack of experimental data has precluded an analysis of these models. The results of experimental studies independently measuring the reaction kinetics and intrinsic stress as a function of orientation and oxidation temperature are presented. The proposed stress models are evaluated in terms of these results. It is concluded that the existing models do not explain all aspects of the data.
- Physical Chemistry
- Solid State Physics