Intrinsic siO2 Film Stress Measurements on Thermally Oxidized si.
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
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We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for Si02 films formed on Si. This study includes stress measurements on four Si orientations 100, 110, 111, and 311 at oxidation temperatures ranging from 700-1100 C wet H20 vs. dry 02 oxidations for 100 and 111 surfaces and the effects of post-oxidation annealing on stress. We find an orientation dependence for intrinsic stress which scales in the following manner 110 311 100 111 a reduction in stress for wet vs. dry studies and an even larger reduction for post-oxidation anneals. A recently proposed step model seems to account for the differences in stress with Si orientation. A number of Si oxidation models based on intrinsic stress are compared in their ability to describe the observed behavior, and we conclude that within the Deal-Grove oxidation model, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.
- Physical Chemistry