Accession Number:

ADA169482

Title:

Studies of Organometallic Precursors to Aluminum Nitride

Descriptive Note:

Technical rept.

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY

Report Date:

1986-05-09

Pagination or Media Count:

10.0

Abstract:

The reaction of trialkylaluminum compounds with ammonia has been examined as a potential route to high purity AlN powder and to AlN thins films. This reaction proceeds in stages in which the initially formed Lewis acidbase adduct undergoes thermal decomposition to a series of intermediate alkylaluminum-amide and -imide species with increasing Al-N bonding, i.e., R3A1 NH3 yields R3AlNH3 yields AlN 3RH where R CH3, C2H5, C4H9, etc.. The structure and properties of several of these species have been studied using various physical and chemical methods, leading to a better understanding of the chemistry of this novel A1N precursor system. The structure of the intermediate organoaluminum amide, CH32AlNH2, has been determined by single crystal X-ray diffraction methods and found to contain molecular trimer units with a six- membered Al-N ring structure similar to those which make up the wurzite structure of AlN. This compound is readily volatile and has been used to deposit AlN thin films on Si surfaces by a low-pressure CVD process. This approach has also been used to prepare AlN as a high surface area, high purity powder. Keywords Chemical vapor deposition Organoaluminum amide.

Subject Categories:

  • Organic Chemistry
  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE