Materials Research Society Symposia Proceedings. Volume 54. Thin Films - Interfaces and Phenomena Held in Boston, Massachusetts on 2-6 December 1985,
MATERIALS RESEARCH SOCIETY PITTSBURGH PA
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This symposium included a session which covered Schottky barriers and epitaxial silicides. In addition, the symposium addressed the traditional areas of interface reactions and kinetics, ion beam mixing, and silicide formation. New methods of analysis, characterization and thin film growth were described, and it become apparent that these subjects are strongly correlated. Epitaxial layers of various types and combinations attracted much interest. The papers on VLSI interconnects and metallization served to highlight the scientific issues that are most relevant to semiconductor technology. While many talks concentrated on materials related to silicon technology, one of the largest groups of papers addressed the properties of compound semiconductor interfaces. In addition, a session on oxidation, oxides and nitrides bridged some of the issues. Also included were Thin film reactions and kinetics and Schottky barriers and ohmic contacts.
- Solid State Physics