Accession Number:

ADA167960

Title:

Materials Research Society Symposia Proceedings. Volume 52. Rapid Thermal Processing Held in Boston, Massachusetts on 2-4 December 1985,

Descriptive Note:

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Report Date:

1986-01-01

Pagination or Media Count:

497.0

Abstract:

The Symposium on Rapid Thermal Processing RTP was dominated by discussion on silicon and silicon transistor technology with its host of associated materials oxides, nitrides, silicides and reflow glasses. The session on compound semiconductors was dominated by GaAs and related III-V materials. Rapid annealing has now grown to include processes with reactive gases. This includes rather extensive studies of the oxidation of silicon and the nitridation of oxides. Now, RTP has been used to grow epitaxial silicon. This technique may herald the introduction of RTP style processing equipment to carry out a wide range of semiconductor fabrication steps. As the move toward larger wafer sizes continues and if single-wafer-processing becomes pervasive, it is likely that many device fabrication steps will be carried out in equipment of the RTP-type. RTP can minimize thermal cycle, provide rapid process turn around and is single-wafer-processing compatible.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE