Accession Number:

ADA167762

Title:

Focused Ion Beam Technology,

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS

Personal Author(s):

Report Date:

1985-10-01

Pagination or Media Count:

15.0

Abstract:

The finely focused ion beam is a new instrument with many uses. It can focus a beam of any one of many species of ions at energies up to 200 kV to dimensions below 0.1 micrometers. This capability can be used to implant dopants in semiconductors in a maskless process, to mill away material and repair masks or circuits, to deposit material with submicron resolution if an appropriate local gas ambient is present, to perform lithography by exposing resist, and to analyze and examine specimens. There are about 30 sophisticated systems in operation world wide, about two thirds of them in Japan. The field is still in its infancy, and one can expect both improvements in machinery and many new applications to develop particularly in the area of custom semiconductor devices.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE