Accession Number:

ADA167103

Title:

Chemistry of Non-Equilibrium Film Deposition.

Descriptive Note:

Final rept. 30 Jun 81-1 Oct 85,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s):

Report Date:

1985-12-01

Pagination or Media Count:

27.0

Abstract:

Reactive ion-beam deposition was used to deposit amorphous thin films of dielectric oxides onto low-temperature substrates. Films of TiO2 and PLZT were prepared from metallic and dielectric targets under various beam conditions. Post deposition annealing studies showed the temperature of the crystalline phase transition to be directly affected by film density and thickness. The growth of large grains on the multication PLZT was restricted by continuous porosity resulting from density changes in the film during transformation. Keywords Thin films Titanium dioxide Ion beam deposition Annealing Transmission electron microscopy Lanthanum-modified lead zirconate and Titanate.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE