Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenides.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Pagination or Media Count:
The low temperature photoluminescence properties of Si-, 0- or Si 0 - implanted GaAs have been analyzed. Liquid Encapsulated Czochralski LEC grown GaAS was implanted with 100 keV silicon ions at a dose of 6 x 10 to the 12th powersq cm andor 65 keV oxygen ions at a dose of 1.5 x 10 to the 12th power or 3 x 10 to the 12th power sq cm. The oxygen ion energy was chosen so that its projected range coincided with that of the silicon ion. The Si-implanted layers were annealed at 850 C for 15 minutes. The 0- and SiO- implanted samples were annealed at 400 C for two hours or 900 C for 15 minutes. Electrical measurements indicated tha GaAsSiO layers annealed at 400 C had resistivities four orders of magnitude larger than the Si-implanted layers. In contrast, the resistivity of the GaAsSiO layers had increased by only a factor of one and a half when annealed at 900 C. By comparing spectral features of the differently prepared samples as a function of sample temperature as well as depth within the sample, it was found that there was some correlation between the electrical and optical properties of these layers. The free-to-bound transition e,SiAs in the GaAsSi layers was quenched in the 400 C annealed GaAsSiO layers, which in turn exhibited relatively high resistivity. However, this particular transition was found in the relatively low resistivity GaAsSiO layers annealed at 900 C.
- Radiation and Nuclear Chemistry
- Solid State Physics