Accession Number:

ADA167036

Title:

A Proposed Classification Scheme for the Total-Dose Radiation Response of MOS (Metal-Oxide-Semiconductor) Devices,

Descriptive Note:

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

• Boesch, E. E. , Jr

Report Date:

1985-12-01

Pagination or Media Count:

12.0

Abstract:

A scheme is proposed for the classification of the long-term radiation responses of MOS metal-oxide-semiconductor devices. The scheme consists of four classes or categories based on the relative magnitudes of hole trapping and interface-state buildup in the gate oxide layer as a result of irradiation. Also presented is a practical procedure for determining the classification of test devices through standard radiation response measurements. Author

Descriptors:

• *GATES(CIRCUITS)
• *HOLES(ELECTRON DEFICIENCIES)
• *RADIATION EFFECTS
• *TRAPPING(CHARGED PARTICLES)
• CLASSIFICATION
• LAYERS
• LONG RANGE(TIME)
• MEASUREMENT
• OXIDES
• TEST EQUIPMENT

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE