Accession Number:

ADA167036

Title:

A Proposed Classification Scheme for the Total-Dose Radiation Response of MOS (Metal-Oxide-Semiconductor) Devices,

Descriptive Note:

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1985-12-01

Pagination or Media Count:

12.0

Abstract:

A scheme is proposed for the classification of the long-term radiation responses of MOS metal-oxide-semiconductor devices. The scheme consists of four classes or categories based on the relative magnitudes of hole trapping and interface-state buildup in the gate oxide layer as a result of irradiation. Also presented is a practical procedure for determining the classification of test devices through standard radiation response measurements. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE