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Accession Number:
ADA167036
Title:
A Proposed Classification Scheme for the Total-Dose Radiation Response of MOS (Metal-Oxide-Semiconductor) Devices,
Descriptive Note:
Corporate Author:
HARRY DIAMOND LABS ADELPHI MD
Report Date:
1985-12-01
Pagination or Media Count:
12.0
Abstract:
A scheme is proposed for the classification of the long-term radiation responses of MOS metal-oxide-semiconductor devices. The scheme consists of four classes or categories based on the relative magnitudes of hole trapping and interface-state buildup in the gate oxide layer as a result of irradiation. Also presented is a practical procedure for determining the classification of test devices through standard radiation response measurements. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE