Accession Number:

ADA167008

Title:

Raman Spectrometer with Microprobe Capability.

Descriptive Note:

Final rept. 15 Jul 84-15 Jul 85,

Corporate Author:

CINCINNATI UNIV OH SOLID STATE ELECTRONICS LAB

Personal Author(s):

Report Date:

1986-01-15

Pagination or Media Count:

13.0

Abstract:

This report describes the results of this equipment grant funded as a part of the Department of Defense DOD University Research Instrumentation Program. This grant funded the purchase of a Raman spectrometer with microprobe capability having resolution of 1.0 micron. This report describes the equipment selecting decision, the configuration of the instrument selected. and some experimental results. The experimental results include Raman spectra used in characterization of laser recrystallized silicon and ion implanted regions in semi-insulating GaAs. The Raman microprobe can be used to characterize the effects of substrate temperature, beam power density and shape, beam scan speed and direction, deposition rate, substrate seeding, and polysilicon encapsulation schemes both near and away from grain boundaries. The frequency shift and the peak width of the Raman scattering from the triply degenerate zone center phonon in Si allow determination of the strain in the grains of laser recrystallized polysilicon. Reducing these strains will allow us to achieve large single grains of device quality.

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE