Accession Number:

ADA165911

Title:

Semiconducting Transition Metal Silicides for Electro-Optic VSLI Interconnects.

Descriptive Note:

Interim rept. no. 2,

Corporate Author:

COLORADO RESEARCH DEVELOPMENT CORP FORT COLLINS

Personal Author(s):

Report Date:

1985-11-27

Pagination or Media Count:

7.0

Abstract:

Optical and electrical measurements of the chromium disilicide forbidden energy gap have been made. These activities are detailed. The samples used for this experiment were formed by sputtering chromium onto silicon 100 wafers which had been thermally oxidized and then coated with a polysilicon layer. Chromium disilicide layers were formed with annealing temperatures ranging from 500 to 1100C to investigate the effect of this fabrication parameter on the forbidden energy gap of the films. Some initial measurements of the optical transmittance and reflectance of the chromium silicide films are shown using films formed on bare silicon wafers. These data have been analyzed using a computer model of the silicide film-silicon substrate system. The manganese and iridium sputtering targets have not arrived from the vendor. The work on these materials will begin as soon as these targets are received.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE