Accession Number:

ADA165597

Title:

Thermodynamically Stable Metal/III-V Compound-Semiconductor Interfaces.

Descriptive Note:

Technical rept.,

Corporate Author:

CALIFORNIA UNIV LOS ANGELES DEPT OF CHEMISTRY AND BIOCHEMISTRY

Report Date:

1986-02-28

Pagination or Media Count:

8.0

Abstract:

Chemical reactions that occur at a metalIII-V compound-semiconductor interface should be minimized if the change in Gibbs free energy of the bulk materials with respect to any possible reaction products is positive. However, the large positive change in entropy caused by vaporization of the highly volatile group V elements is a very important contribution to the Gibbs free energy of these systems, especially at higher temperatures. Thus, a particular metalIII-V compound-semiconductor interface may be thermodynamically stable at one temperature, but unstable with respect to sublimation of elemental group V species at a higher temperature if the enthalpy change for the reaction is positive. Examination of bulk phase diagrams makes it possible to rationalize the reaction products observed and to predict which will be the most stable interface for any particular metalIII-V system.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE