Electron Induced Conductivity of Al2O3 as Pertaining to Thermionic Integrated Circuits.
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
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Experiments were conducted to measure the electron induced conductivity EIC of single crystal sapphire Al2O3 and poly-crystalline alumina Al2O3. The EIC is generated when the samples are bombarded with high energy electrons, utilizing the Naval Postgraduate Schools S-band linear accelerator LINAC. The EIC was measured at dose rate up to 6 x 10 to the 7th power rad Sisec. The EIC for alumina was an order of magnitude smaller than the value for sapphire. The value calculated for alumina was 10,000 per ohm cm and 1,000 per ohm cm for sapphire. The response of EIC to a given dose rate did not change as the dose accumulated. Surface flashover problems during electron irradiation were observed and are discussed.
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