Accession Number:

ADA165584

Title:

Entropy-Driven Loss of Gas-Phase Group V Species from GOLD/III-V Compound Semiconductor Systems.

Descriptive Note:

Technical rept.,

Corporate Author:

CALIFORNIA UNIV LOS ANGELES DEPT OF CHEMISTRY AND BIOCHEMISTRY

Personal Author(s):

Report Date:

1986-02-01

Pagination or Media Count:

36.0

Abstract:

Temperature dependent chemical interactions between Au and nine III-V compound semiconductors IIIA1, Ga, In and VP, As, Sb have been calculated using bulk thermodynamic properties. Enthalpic considerations alone are insufficient to predict metalcompound-semiconductor reactivities. The entropy of vaporization of the group V elements is shown to be an extremely important driving force for chemical reactions involving the III-Vs, since it enables several endothermic reactions to occur spontaneously under certain temperature and pressure conditions. Plots of either Gibbs Free energies of reaction or equilibrium vapor pressure of the group v element versus temperature are used to predict critical reaction temperatures for each of the systems studied. These plots agree extremely well with previous experimental observations of thin film reactions of Au on GaAs.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE